Infineon Technologies - BSC011N03LSATMA1

KEY Part #: K6416367

BSC011N03LSATMA1 Bei (USD) [119108pcs Hisa]

  • 1 pcs$0.31054

Nambari ya Sehemu:
BSC011N03LSATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 30V 100A 8TDSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Arrays and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC011N03LSATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSC011N03LSATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 30V 100A 8TDSON
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 37A (Ta), 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4700pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 96W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8
Kifurushi / Kesi : 8-PowerTDFN