DMN3016LDN-13 Bei (USD) [462518pcs Hisa]
- 1 pcs$0.07997
- 10,000 pcs$0.07048
- Nambari ya Sehemu:
- DMN3016LDN-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2 N-CH 9.2A VDFN3030-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN3016LDN-13 electronic components. DMN3016LDN-13 can be shipped within 24 hours after order. If you have any demands for DMN3016LDN-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3016LDN-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN3016LDN-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2 N-CH 9.2A VDFN3030-8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
-
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9.2A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs :
20 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.3nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1415pF @ 15V
Nguvu - Max :
-
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji :
V-DFN3030-8 (Type J)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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