[549pcs Hisa]
- Nambari ya Sehemu:
- SI3812DV-T1-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 20V 2A 6-TSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - DIAC, SIDAC, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Moduli za Dereva za Nguvu and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI3812DV-T1-E3 electronic components. SI3812DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3812DV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3812DV-T1-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SI3812DV-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 20V 2A 6-TSOP
Mfululizo :
LITTLE FOOT®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ Id :
600mV @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs :
4nC @ 4.5V
Vgs (Max) :
±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
830mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
6-TSOP
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
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