GA10SICP12-263 Bei (USD) [3349pcs Hisa]
- 1 pcs$19.21305
- 10 pcs$17.77033
- 25 pcs$16.32929
- 100 pcs$15.17669
- Nambari ya Sehemu:
- GA10SICP12-263
- Mzalishaji:
- GeneSiC Semiconductor
- Maelezo ya kina:
- TRANS SJT 1200V 25A TO263-7.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Thyristors - DIAC, SIDAC, Viwango - RF, Thyristors - SCR, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in GeneSiC Semiconductor GA10SICP12-263 electronic components. GA10SICP12-263 can be shipped within 24 hours after order. If you have any demands for GA10SICP12-263, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10SICP12-263 Sifa za Bidhaa
Nambari ya Sehemu :
GA10SICP12-263
Mzalishaji :
GeneSiC Semiconductor
Maelezo :
TRANS SJT 1200V 25A TO263-7
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
-
Teknolojia :
SiC (Silicon Carbide Junction Transistor)
Kukata kwa Voltage Voltage (Vdss) :
1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
-
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 10A
Vgs (th) (Max) @ Id :
-
Malango ya Lango (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1403pF @ 800V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
170W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D2PAK (7-Lead)
Kifurushi / Kesi :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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