Nambari ya Sehemu :
TK100L60W,VQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 600V 100A TO3PL
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
100A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
18 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 5mA
Malango ya Lango (Qg) (Max) @ Vgs :
360nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
15000pF @ 30V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
797W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-3P(L)
Kifurushi / Kesi :
TO-3PL