[2019pcs Hisa]
- Nambari ya Sehemu:
- IRF1902GPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 20V 4.2A 8SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF1902GPBF electronic components. IRF1902GPBF can be shipped within 24 hours after order. If you have any demands for IRF1902GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1902GPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF1902GPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 20V 4.2A 8SOIC
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
-
Njia ya Kutumia (Max) @ Id, Vgs :
85 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.5nC @ 4.5V
Vgs (Max) :
-
Uingizwaji uwezo (Ciss) (Max) @ Vds :
310pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
-
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
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