Nambari ya Sehemu :
BYC8B-600PQP
Mzalishaji :
NXP USA Inc.
Maelezo :
DIODE GEN PURP 600V 8A
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
8A
Voltage - Mbele (Vf) (Max) @ Kama :
3.4V @ 8A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
18ns
Sasa - Rejea kuvuja @ Vr :
20µA @ 600V
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji :
D2PAK
Joto la Kufanya kazi - Junction :
175°C (Max)