[9435pcs Hisa]
- Nambari ya Sehemu:
- GT60N321(Q)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- IGBT 1000V 60A 170W TO3P LH.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays, Transistors - JFETs and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage GT60N321(Q) electronic components. GT60N321(Q) can be shipped within 24 hours after order. If you have any demands for GT60N321(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT60N321(Q) Sifa za Bidhaa
Nambari ya Sehemu :
GT60N321(Q)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
IGBT 1000V 60A 170W TO3P LH
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya IGBT :
-
Voltage - Kukusanya Emitter Kuvunja (Max) :
1000V
Sasa - Mtoza (Ic) (Max) :
60A
Sasa - Mtoza Ushuru (Icm) :
120A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 60A
Nguvu - Max :
170W
Kubadilisha Nishati :
-
Aina ya Kuingiza :
Standard
Malango ya Lango :
-
Td (on / off) @ 25 ° C :
330ns/700ns
Hali ya Uchunguzi :
-
Rudisha Wakati wa Kuokoa (trr) :
2.5µs
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-3PL
Kifurushi cha Kifaa cha Mtoaji :
TO-3P(LH)
Habari mpya kabisa
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