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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. AS4C128M8D2-25BIN

Alliance Memory, Inc. - AS4C128M8D2-25BIN

KEY Part #: K937506

AS4C128M8D2-25BIN Bei (USD) [17157pcs Hisa]

  • 1 pcs$2.67064
  • 10 pcs$2.43663
  • 25 pcs$2.39018
  • 50 pcs$2.37387
  • 100 pcs$2.12951
  • 250 pcs$2.12132
  • 500 pcs$1.98891
  • 1,000 pcs$1.90427
Nambari ya Sehemu:
AS4C128M8D2-25BIN
Mzalishaji:
Alliance Memory, Inc.
Maelezo ya kina:
IC DRAM 1G PARALLEL 60FBGA. DRAM 1G, 1.8V, 128M x 16 DDR2
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Chaja za Batri, Mantiki - Msajili wa Shift, ICs Maalum, Iliyoingizwa - Mfumo kwenye Chip (SoC), Mantiki - Jenereta za Parity na Checkers, PMIC - Watawala wa Nguvu Zaidi ya Ethernet (PoE), Saa / Majira - Muda uliopangwa na Oscillators and Iliyoingizwa - Microcontroller, Microprocessor, Mo ...
Faida ya Ushindani:
We specialize in Alliance Memory, Inc. AS4C128M8D2-25BIN electronic components. AS4C128M8D2-25BIN can be shipped within 24 hours after order. If you have any demands for AS4C128M8D2-25BIN, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS4C128M8D2-25BIN Sifa za Bidhaa

Nambari ya Sehemu : AS4C128M8D2-25BIN
Mzalishaji : Alliance Memory, Inc.
Maelezo : IC DRAM 1G PARALLEL 60FBGA
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Volatile
Fomati ya kumbukumbu : DRAM
Teknolojia : SDRAM - DDR2
Saizi ya kumbukumbu : 1Gb (128M x 8)
Usafirishaji wa Saa : 400MHz
Andika Wakati wa Msaada - Neno, Ukurasa : 15ns
Wakati wa Upataji : 400ps
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.9V
Joto la Kufanya kazi : -40°C ~ 95°C (TC)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 60-TFBGA
Kifurushi cha Kifaa cha Mtoaji : 60-FBGA (8x10)

Habari mpya kabisa

Alliance Memory Low Power CMOS SRAM
Alliance Memory Low-Power DDR2 SDRAM
Alliance Memory MT41x DDR3 SDRAMs
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