Vishay Siliconix - VQ1001P-E3

KEY Part #: K6523756

[4059pcs Hisa]


    Nambari ya Sehemu:
    VQ1001P-E3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 4N-CH 30V 0.83A 14DIP.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - RF, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja and Transistors - Kusudi Maalum ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix VQ1001P-E3 electronic components. VQ1001P-E3 can be shipped within 24 hours after order. If you have any demands for VQ1001P-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VQ1001P-E3 Sifa za Bidhaa

    Nambari ya Sehemu : VQ1001P-E3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 4N-CH 30V 0.83A 14DIP
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : 4 N-Channel
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 830mA
    Njia ya Kutumia (Max) @ Id, Vgs : 1.75 Ohm @ 200mA, 5V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : -
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 110pF @ 15V
    Nguvu - Max : 2W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi / Kesi : -
    Kifurushi cha Kifaa cha Mtoaji : 14-DIP

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