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  5. APTM120DA30T1G

Microsemi Corporation - APTM120DA30T1G

KEY Part #: K6396577

APTM120DA30T1G Bei (USD) [2343pcs Hisa]

  • 1 pcs$18.48678
  • 100 pcs$18.26704
Nambari ya Sehemu:
APTM120DA30T1G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET N-CH 1200V 31A SP1.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Viwango - RF, Viwango - Rectifiers - Arrays, Viwango - Zener - Arrays, Transistors - JFETs, Transistors - IGBTs - Moduli and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Microsemi Corporation APTM120DA30T1G electronic components. APTM120DA30T1G can be shipped within 24 hours after order. If you have any demands for APTM120DA30T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120DA30T1G Sifa za Bidhaa

Nambari ya Sehemu : APTM120DA30T1G
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET N-CH 1200V 31A SP1
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 1200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 31A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 560nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 14560pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 657W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi cha Kifaa cha Mtoaji : SP1
Kifurushi / Kesi : SP1

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