Nambari ya Sehemu :
SIRA50ADP-T1-RE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CHAN 40V PPAK SO-8
Mfululizo :
TrenchFET® Gen IV
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
54.8A (Ta), 219A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.04 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
150nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
7300pF @ 20V
Kuondoa Nguvu (Max) :
6.25W (Ta), 100W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SO-8
Kifurushi / Kesi :
PowerPAK® SO-8