[2205pcs Hisa]
- Nambari ya Sehemu:
- FDN338P_G
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- INTEGRATED CIRCUIT.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Thyristors - SCR, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor FDN338P_G electronic components. FDN338P_G can be shipped within 24 hours after order. If you have any demands for FDN338P_G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN338P_G Sifa za Bidhaa
Nambari ya Sehemu :
FDN338P_G
Mzalishaji :
ON Semiconductor
Maelezo :
INTEGRATED CIRCUIT
Mfululizo :
PowerTrench®
Hali ya Sehemu :
Obsolete
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.6A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
2.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
115 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
6.2nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
451pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
500mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SuperSOT-3
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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