Vishay Semiconductor Diodes Division - EGP31F-E3/D

KEY Part #: K6440233

EGP31F-E3/D Bei (USD) [247410pcs Hisa]

  • 1 pcs$0.14950

Nambari ya Sehemu:
EGP31F-E3/D
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 300V 3A DO201AD. Rectifiers 3A,300V,50NS
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Moduli za Dereva za Nguvu, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Moja, Thyristors - DIAC, SIDAC, Viwango - RF, Thyristors - SCR and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division EGP31F-E3/D electronic components. EGP31F-E3/D can be shipped within 24 hours after order. If you have any demands for EGP31F-E3/D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP31F-E3/D Sifa za Bidhaa

Nambari ya Sehemu : EGP31F-E3/D
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 300V 3A DO201AD
Mfululizo : SUPERECTIFIER®
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 300V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 1.25V @ 3A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 50ns
Sasa - Rejea kuvuja @ Vr : 3µA @ 300V
Uwezo @ Vr, F : 48pF @ 4V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : DO-201AD, Axial
Kifurushi cha Kifaa cha Mtoaji : DO-201AD
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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