Toshiba Semiconductor and Storage - SSM3J120TU,LF

KEY Part #: K6416248

SSM3J120TU,LF Bei (USD) [666819pcs Hisa]

  • 1 pcs$0.06132
  • 3,000 pcs$0.06102

Nambari ya Sehemu:
SSM3J120TU,LF
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
MOSFET P-CH 20V 4A UFM.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Viwango - RF and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage SSM3J120TU,LF electronic components. SSM3J120TU,LF can be shipped within 24 hours after order. If you have any demands for SSM3J120TU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J120TU,LF Sifa za Bidhaa

Nambari ya Sehemu : SSM3J120TU,LF
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : MOSFET P-CH 20V 4A UFM
Mfululizo : U-MOSIV
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.5V, 4V
Njia ya Kutumia (Max) @ Id, Vgs : 38 mOhm @ 3A, 4V
Vgs (th) (Max) @ Id : 1V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 22.3nC @ 4V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1484pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 500mW (Ta)
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : UFM
Kifurushi / Kesi : 3-SMD, Flat Leads

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