IPP530N15N3GXKSA1 Bei (USD) [51954pcs Hisa]
- 1 pcs$0.75258
- Nambari ya Sehemu:
- IPP530N15N3GXKSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 150V 21A TO220-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja, Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPP530N15N3GXKSA1 electronic components. IPP530N15N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP530N15N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP530N15N3GXKSA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPP530N15N3GXKSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 150V 21A TO220-3
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
150V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
21A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
8V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
53 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4V @ 35µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
887pF @ 75V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
68W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO220-3-1
Kifurushi / Kesi :
TO-220-3
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