Nambari ya Sehemu :
GPP100MS-E3/54
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
DIODE GEN PURP 1KV 10A P600
Hali ya Sehemu :
Obsolete
Voltage - DC Reverse (Vr) (Max) :
1000V
Sasa - Wastani Aliyerekebishwa (Io) :
10A
Voltage - Mbele (Vf) (Max) @ Kama :
1.05V @ 10A
Kasi :
Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
5.5µs
Sasa - Rejea kuvuja @ Vr :
5µA @ 1000V
Uwezo @ Vr, F :
110pF @ 4V, 1MHz
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
P600, Axial
Kifurushi cha Kifaa cha Mtoaji :
P600
Joto la Kufanya kazi - Junction :
-55°C ~ 175°C