SI4816BDY-T1-E3 Bei (USD) [111328pcs Hisa]
- 1 pcs$0.33224
- 2,500 pcs$0.30952
- Nambari ya Sehemu:
- SI4816BDY-T1-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 30V 5.8A 8-SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Thyristors - SCR, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Transistors - IGBTs - Arrays and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI4816BDY-T1-E3 electronic components. SI4816BDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4816BDY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4816BDY-T1-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SI4816BDY-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 30V 5.8A 8-SOIC
Mfululizo :
LITTLE FOOT®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Half Bridge)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.8A, 8.2A
Njia ya Kutumia (Max) @ Id, Vgs :
18.5 mOhm @ 6.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
10nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
-
Nguvu - Max :
1W, 1.25W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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