PMZB200UNEYL Bei (USD) [1283576pcs Hisa]
- 1 pcs$0.02896
- 10,000 pcs$0.02882
- Nambari ya Sehemu:
- PMZB200UNEYL
- Mzalishaji:
- Nexperia USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 30V SOT883.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers, Viwango - Zener - Arrays, Transistors - IGBTs - Moja, Transistors - JFETs and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Nexperia USA Inc. PMZB200UNEYL electronic components. PMZB200UNEYL can be shipped within 24 hours after order. If you have any demands for PMZB200UNEYL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZB200UNEYL Sifa za Bidhaa
Nambari ya Sehemu :
PMZB200UNEYL
Mzalishaji :
Nexperia USA Inc.
Maelezo :
MOSFET N-CH 30V SOT883
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.4A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
250 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
2.7nC @ 4.5V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
89pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
350mW (Ta), 6.25W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DFN1006B-3
Kifurushi / Kesi :
3-XFDFN
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