Nexperia USA Inc. - PHT6NQ10T,135

KEY Part #: K6416639

PHT6NQ10T,135 Bei (USD) [281605pcs Hisa]

  • 1 pcs$0.17708
  • 4,000 pcs$0.17620

Nambari ya Sehemu:
PHT6NQ10T,135
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 100V 3A SOT223.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Thyristors - DIAC, SIDAC and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PHT6NQ10T,135 Sifa za Bidhaa

Nambari ya Sehemu : PHT6NQ10T,135
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 100V 3A SOT223
Mfululizo : TrenchMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 90 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 633pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.8W (Ta), 8.3W (Tc)
Joto la Kufanya kazi : -65°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SC-73
Kifurushi / Kesi : TO-261-4, TO-261AA

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