Infineon Technologies - IRLS3813PBF

KEY Part #: K6402724

IRLS3813PBF Bei (USD) [2605pcs Hisa]

  • 1,000 pcs$0.57811

Nambari ya Sehemu:
IRLS3813PBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 30V 160A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Thyristors - SCR, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Transistors - Ushirikiano uliopangwa and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Infineon Technologies IRLS3813PBF electronic components. IRLS3813PBF can be shipped within 24 hours after order. If you have any demands for IRLS3813PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLS3813PBF Sifa za Bidhaa

Nambari ya Sehemu : IRLS3813PBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 30V 160A D2PAK
Mfululizo : HEXFET®
Hali ya Sehemu : Discontinued at Digi-Key
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 160A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.95 mOhm @ 148A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs : 83nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 8020pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 195W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D2PAK
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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