Nambari ya Sehemu :
2SA965-Y,F(J
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS PNP 800MA 120V TO226-3
Hali ya Sehemu :
Obsolete
Sasa - Mtoza (Ic) (Max) :
800mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
120V
Vce Saturdayation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 100mA, 5V
Mara kwa mara - Mpito :
120MHz
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-226-3, TO-92-3 Long Body
Kifurushi cha Kifaa cha Mtoaji :
LSTM