Toshiba Semiconductor and Storage - 2SB1481(TOJS,Q,M)

KEY Part #: K6381891

[9844pcs Hisa]


    Nambari ya Sehemu:
    2SB1481(TOJS,Q,M)
    Mzalishaji:
    Toshiba Semiconductor and Storage
    Maelezo ya kina:
    TRANS PNP 4A 100V TO220-3.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja and Thyristors - SCRs - Moduli ...
    Faida ya Ushindani:
    We specialize in Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M) electronic components. 2SB1481(TOJS,Q,M) can be shipped within 24 hours after order. If you have any demands for 2SB1481(TOJS,Q,M), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SB1481(TOJS,Q,M) Sifa za Bidhaa

    Nambari ya Sehemu : 2SB1481(TOJS,Q,M)
    Mzalishaji : Toshiba Semiconductor and Storage
    Maelezo : TRANS PNP 4A 100V TO220-3
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya Transistor : PNP
    Sasa - Mtoza (Ic) (Max) : 4A
    Voltage - Kukusanya Emitter Kuvunja (Max) : 100V
    Vce Saturdayation (Max) @ Ib, Ic : 1.5V @ 6mA, 3A
    Sasa - Ushuru Mtoaji : 2µA (ICBO)
    DC Sasa Gain (hFE) (Min) @ Ic, Vce : 2000 @ 3A, 2V
    Nguvu - Max : 2W
    Mara kwa mara - Mpito : -
    Joto la Kufanya kazi : 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi / Kesi : TO-220-3 Full Pack
    Kifurushi cha Kifaa cha Mtoaji : TO-220NIS

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