Infineon Technologies - IPD60N10S4L12ATMA1

KEY Part #: K6420246

IPD60N10S4L12ATMA1 Bei (USD) [173756pcs Hisa]

  • 1 pcs$0.21287
  • 2,500 pcs$0.19527

Nambari ya Sehemu:
IPD60N10S4L12ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH TO252-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Infineon Technologies IPD60N10S4L12ATMA1 electronic components. IPD60N10S4L12ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60N10S4L12ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD60N10S4L12ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPD60N10S4L12ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH TO252-3
Mfululizo : Automotive, AEC-Q101, HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 60A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 12 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 46µA
Malango ya Lango (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3170pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 94W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3-313
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63