Nambari ya Sehemu :
TK10P60W,RVQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 600V 9.7A DPAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
430 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 500µA
Malango ya Lango (Qg) (Max) @ Vgs :
20nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
700pF @ 300V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
80W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DPAK
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63