DMG6602SVT-7 Bei (USD) [885618pcs Hisa]
- 1 pcs$0.04176
- 3,000 pcs$0.03828
- Nambari ya Sehemu:
- DMG6602SVT-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N/P-CH 30V TSOT23-6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Viwango - RF and Thyristors - SCRs - Moduli ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMG6602SVT-7 electronic components. DMG6602SVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6602SVT-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMG6602SVT-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N/P-CH 30V TSOT23-6
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate, 4.5V Drive
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.4A, 2.8A
Njia ya Kutumia (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
13nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
400pF @ 15V
Nguvu - Max :
840mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
Kifurushi cha Kifaa cha Mtoaji :
TSOT-23-6
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