Vishay Siliconix - SI8467DB-T2-E1

KEY Part #: K6406373

[1341pcs Hisa]


    Nambari ya Sehemu:
    SI8467DB-T2-E1
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET P-CH 20V MICROFOOT.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Arrays, Thyristors - TRIAC and Viwango - Zener - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI8467DB-T2-E1 electronic components. SI8467DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8467DB-T2-E1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI8467DB-T2-E1 Sifa za Bidhaa

    Nambari ya Sehemu : SI8467DB-T2-E1
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET P-CH 20V MICROFOOT
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : P-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 20V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : -
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 4.5V
    Njia ya Kutumia (Max) @ Id, Vgs : 73 mOhm @ 1A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 10V
    Vgs (Max) : ±12V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 475pF @ 10V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 780mW (Ta), 1.8W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : 4-Microfoot
    Kifurushi / Kesi : 4-XFBGA, CSPBGA