Infineon Technologies - IPD100N06S403ATMA2

KEY Part #: K6419285

IPD100N06S403ATMA2 Bei (USD) [102153pcs Hisa]

  • 1 pcs$0.38277
  • 2,500 pcs$0.29536

Nambari ya Sehemu:
IPD100N06S403ATMA2
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 60V 100A TO252-3-11.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Viwango - Zener - Moja, Thyristors - SCR, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu and Viwango - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD100N06S403ATMA2 Sifa za Bidhaa

Nambari ya Sehemu : IPD100N06S403ATMA2
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 60V 100A TO252-3-11
Mfululizo : Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 90µA
Malango ya Lango (Qg) (Max) @ Vgs : 128nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 10400pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 150W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3-11
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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