IPN60R3K4CEATMA1 Bei (USD) [514616pcs Hisa]
- 1 pcs$0.07187
- 3,000 pcs$0.06317
- Nambari ya Sehemu:
- IPN60R3K4CEATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET NCH 600V 2.6A SOT223.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - Bridge Rectifiers, Viwango - Zener - Moja and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPN60R3K4CEATMA1 electronic components. IPN60R3K4CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R3K4CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R3K4CEATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPN60R3K4CEATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET NCH 600V 2.6A SOT223
Mfululizo :
CoolMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.6nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
93pF @ 100V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
5W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-SOT223
Kifurushi / Kesi :
SOT-223-3
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