RN2707JE(TE85L,F) Bei (USD) [1060332pcs Hisa]
- 1 pcs$0.03488
- Nambari ya Sehemu:
- RN2707JE(TE85L,F)
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- TRANS 2PNP PREBIAS 0.1W ESV.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - IGBTs - Moja ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage RN2707JE(TE85L,F) electronic components. RN2707JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2707JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2707JE(TE85L,F) Sifa za Bidhaa
Nambari ya Sehemu :
RN2707JE(TE85L,F)
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
TRANS 2PNP PREBIAS 0.1W ESV
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya Transistor :
2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) :
100mA
Voltage - Kukusanya Emitter Kuvunja (Max) :
50V
Upinzani - Msingi (R1) :
10 kOhms
Upinzani - Base ya Emitter (R2) :
47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji :
100nA (ICBO)
Mara kwa mara - Mpito :
200MHz
Nguvu - Max :
100mW
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-553
Kifurushi cha Kifaa cha Mtoaji :
ESV
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