Toshiba Semiconductor and Storage - RN2610(TE85L,F)

KEY Part #: K6529140

RN2610(TE85L,F) Bei (USD) [1060332pcs Hisa]

  • 1 pcs$0.03488

Nambari ya Sehemu:
RN2610(TE85L,F)
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
TRANS 2PNP PREBIAS 0.3W SM6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage RN2610(TE85L,F) electronic components. RN2610(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2610(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2610(TE85L,F) Sifa za Bidhaa

Nambari ya Sehemu : RN2610(TE85L,F)
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : TRANS 2PNP PREBIAS 0.3W SM6
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : -
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : 200MHz
Nguvu - Max : 300mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-74, SOT-457
Kifurushi cha Kifaa cha Mtoaji : SM6

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