Nambari ya Sehemu :
IPI120N06S4H1AKSA2
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH TO262-3
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Malango ya Lango (Qg) (Max) @ Vgs :
270nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
21900pF @ 25V
Kuondoa Nguvu (Max) :
250W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO262-3-1
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA