BSB104N08NP3GXUSA1 Bei (USD) [142021pcs Hisa]
- 1 pcs$0.26044
- 5,000 pcs$0.23897
- Nambari ya Sehemu:
- BSB104N08NP3GXUSA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 80V 13A 2WDSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Thyristors - TRIAC, Transistors - Kusudi Maalum, Viwango - Zener - Arrays and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSB104N08NP3GXUSA1 electronic components. BSB104N08NP3GXUSA1 can be shipped within 24 hours after order. If you have any demands for BSB104N08NP3GXUSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB104N08NP3GXUSA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSB104N08NP3GXUSA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 80V 13A 2WDSON
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Ta), 50A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Malango ya Lango (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2100pF @ 40V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.8W (Ta), 42W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
MG-WDSON-2, CanPAK M™
Kifurushi / Kesi :
3-WDSON
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