Infineon Technologies - IRF6717MTRPBF

KEY Part #: K6416337

IRF6717MTRPBF Bei (USD) [79271pcs Hisa]

  • 1 pcs$0.55881
  • 4,800 pcs$0.55603

Nambari ya Sehemu:
IRF6717MTRPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 25V 38A DIRECTFET.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Thyristors - TRIAC, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCRs - Moduli and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF6717MTRPBF Sifa za Bidhaa

Nambari ya Sehemu : IRF6717MTRPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 25V 38A DIRECTFET
Mfululizo : HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 38A (Ta), 200A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.25 mOhm @ 38A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 150µA
Malango ya Lango (Qg) (Max) @ Vgs : 69nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 6750pF @ 13V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.8W (Ta), 96W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DIRECTFET™ MX
Kifurushi / Kesi : DirectFET™ Isometric MX