Nambari ya Sehemu :
BSC014N06NSTATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
DIFFERENTIATED MOSFETS
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.45 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.3V @ 120µA
Malango ya Lango (Qg) (Max) @ Vgs :
104nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
8125pF @ 30V
Kuondoa Nguvu (Max) :
3W (Ta), 188W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8 FL
Kifurushi / Kesi :
8-PowerTDFN