Vishay Siliconix - SIHA2N80E-GE3

KEY Part #: K6419347

SIHA2N80E-GE3 Bei (USD) [106720pcs Hisa]

  • 1 pcs$0.34658

Nambari ya Sehemu:
SIHA2N80E-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CHAN 800V TO-220 FULLPA.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIHA2N80E-GE3 electronic components. SIHA2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHA2N80E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHA2N80E-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIHA2N80E-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CHAN 800V TO-220 FULLPA
Mfululizo : E
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.75 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 19.6nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 315pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 29W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220 Full Pack
Kifurushi / Kesi : TO-220-3 Full Pack

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