ON Semiconductor - SMUN5116DW1T1G

KEY Part #: K6528836

SMUN5116DW1T1G Bei (USD) [924855pcs Hisa]

  • 1 pcs$0.03999
  • 6,000 pcs$0.03777

Nambari ya Sehemu:
SMUN5116DW1T1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS 2PNP PREBIAS 0.187W SOT363.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Arrays, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in ON Semiconductor SMUN5116DW1T1G electronic components. SMUN5116DW1T1G can be shipped within 24 hours after order. If you have any demands for SMUN5116DW1T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SMUN5116DW1T1G Sifa za Bidhaa

Nambari ya Sehemu : SMUN5116DW1T1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS 2PNP PREBIAS 0.187W SOT363
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : 2 PNP - Pre-Biased (Dual)
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : -
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 187mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SC-88/SC70-6/SOT-363

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