Vishay Semiconductor Diodes Division - P600M-E3/73

KEY Part #: K6446273

P600M-E3/73 Bei (USD) [164765pcs Hisa]

  • 1 pcs$0.22449
  • 2,700 pcs$0.10736

Nambari ya Sehemu:
P600M-E3/73
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 1KV 6A P600. Rectifiers 6.0 Amp 1000 Volt 400 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja, Transistors - JFETs, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division P600M-E3/73 electronic components. P600M-E3/73 can be shipped within 24 hours after order. If you have any demands for P600M-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

P600M-E3/73 Sifa za Bidhaa

Nambari ya Sehemu : P600M-E3/73
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 1KV 6A P600
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Sasa - Wastani Aliyerekebishwa (Io) : 6A
Voltage - Mbele (Vf) (Max) @ Kama : 1V @ 6A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 2.5µs
Sasa - Rejea kuvuja @ Vr : 5µA @ 1000V
Uwezo @ Vr, F : 150pF @ 4V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : P600, Axial
Kifurushi cha Kifaa cha Mtoaji : P600
Joto la Kufanya kazi - Junction : -50°C ~ 150°C

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