NXP USA Inc. - PH5330E,115

KEY Part #: K6415190

[12496pcs Hisa]


    Nambari ya Sehemu:
    PH5330E,115
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 30V 80A LFPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - Zener - Moja ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PH5330E,115 electronic components. PH5330E,115 can be shipped within 24 hours after order. If you have any demands for PH5330E,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PH5330E,115 Sifa za Bidhaa

    Nambari ya Sehemu : PH5330E,115
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 30V 80A LFPAK
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 80A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 5.7 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 21nC @ 5V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 2010pF @ 10V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 62.5W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : LFPAK56, Power-SO8
    Kifurushi / Kesi : SC-100, SOT-669