[12496pcs Hisa]
- Nambari ya Sehemu:
- PH5330E,115
- Mzalishaji:
- NXP USA Inc.
- Maelezo ya kina:
- MOSFET N-CH 30V 80A LFPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Arrays and Transistors - JFETs ...
- Faida ya Ushindani:
- We specialize in NXP USA Inc. PH5330E,115 electronic components. PH5330E,115 can be shipped within 24 hours after order. If you have any demands for PH5330E,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PH5330E,115 Sifa za Bidhaa
Nambari ya Sehemu :
PH5330E,115
Mzalishaji :
NXP USA Inc.
Maelezo :
MOSFET N-CH 30V 80A LFPAK
Mfululizo :
TrenchMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
5.7 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
21nC @ 5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2010pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
62.5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
LFPAK56, Power-SO8
Kifurushi / Kesi :
SC-100, SOT-669
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