Nambari ya Sehemu :
VS-GT400TH120N
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
IGBT 1200V 600A 2119W DIAP
Hali ya Sehemu :
Obsolete
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
600A
Vce (on) (Max) @ Vge, Ic :
2.15V @ 15V, 400A
Sasa - Ushuru Mtoaji :
5mA
Uingilivu Ufungaji (Wakuu) @ Vce :
28.8nF @ 25V
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Double INT-A-PAK (3 + 8)
Kifurushi cha Kifaa cha Mtoaji :
Double INT-A-PAK