Vishay Siliconix - SIA448DJ-T1-GE3

KEY Part #: K6404414

SIA448DJ-T1-GE3 Bei (USD) [2020pcs Hisa]

  • 3,000 pcs$0.08766

Nambari ya Sehemu:
SIA448DJ-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 20V 12A SC70-6L.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Viwango - RF, Thyristors - SCR, Viwango - Bridge Rectifiers, Viwango - Zener - Moja, Thyristors - TRIAC, Transistors - IGBTs - Moduli and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SIA448DJ-T1-GE3 electronic components. SIA448DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA448DJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA448DJ-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SIA448DJ-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 20V 12A SC70-6L
Mfululizo : TrenchFET®
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 15 mOhm @ 12.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 35nC @ 8V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1380pF @ 1V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.5W (Ta), 19.2W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-70-6 Single
Kifurushi / Kesi : PowerPAK® SC-70-6

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