ON Semiconductor - FDP070AN06A0

KEY Part #: K6419109

FDP070AN06A0 Bei (USD) [91746pcs Hisa]

  • 1 pcs$0.42832
  • 800 pcs$0.42619

Nambari ya Sehemu:
FDP070AN06A0
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 60V 80A TO-220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Transistors - JFETs, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Viwango - RF and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDP070AN06A0 electronic components. FDP070AN06A0 can be shipped within 24 hours after order. If you have any demands for FDP070AN06A0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP070AN06A0 Sifa za Bidhaa

Nambari ya Sehemu : FDP070AN06A0
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 60V 80A TO-220AB
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 15A (Ta), 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 175W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220-3
Kifurushi / Kesi : TO-220-3