TH58NVG3S0HBAI4 Bei (USD) [8571pcs Hisa]
- 1 pcs$5.34569
- Nambari ya Sehemu:
- TH58NVG3S0HBAI4
- Mzalishaji:
- Toshiba Memory America, Inc.
- Maelezo ya kina:
- 8GB SLC NAND 24NM BGA 9X11 3.3V. NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kusudi Maalum la Sauti, Mantiki - Gates na Inverters - Kazi nyingi, Kudhib, Maelewano - Sensor, Kugusa uwezo, Iliyoingizwa - Mfumo kwenye Chip (SoC), Chips za IC, PMIC - Madereva wa Lango, Saa / Saa - Batri za IC and PMIC - Udhibiti / Usimamizi wa sasa ...
- Faida ya Ushindani:
- We specialize in Toshiba Memory America, Inc. TH58NVG3S0HBAI4 electronic components. TH58NVG3S0HBAI4 can be shipped within 24 hours after order. If you have any demands for TH58NVG3S0HBAI4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TH58NVG3S0HBAI4 Sifa za Bidhaa
Nambari ya Sehemu :
TH58NVG3S0HBAI4
Mzalishaji :
Toshiba Memory America, Inc.
Maelezo :
8GB SLC NAND 24NM BGA 9X11 3.3V
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya kumbukumbu :
Non-Volatile
Fomati ya kumbukumbu :
FLASH
Teknolojia :
FLASH - NAND (SLC)
Saizi ya kumbukumbu :
8Gb (1G x 8)
Usafirishaji wa Saa :
-
Andika Wakati wa Msaada - Neno, Ukurasa :
25ns
Wakati wa Upataji :
25ns
Maingiliano ya kumbukumbu :
Parallel
Voltage - Ugavi :
2.7V ~ 3.6V
Joto la Kufanya kazi :
-40°C ~ 85°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
63-VFBGA
Kifurushi cha Kifaa cha Mtoaji :
63-TFBGA (9x11)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
-
-
-
AT88SC1616C-PU
Microchip Technology
IC EEPROM 16K I2C 5MHZ 8DIP. EEPROM CRYPTOMEMORY 16kB 16 ZONE - 8 IND TEMP
-
-
TH58NVG3S0HBAI4
Toshiba Memory America, Inc.
8GB SLC NAND 24NM BGA 9X11 3.3V. NAND Flash 3.3V 8Gb 24nm SLC NAND (EEPROM)
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