SIZF300DT-T1-GE3 Bei (USD) [166378pcs Hisa]
- 1 pcs$0.22231
- Nambari ya Sehemu:
- SIZF300DT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET DUAL N-CHAN 30V PPAIR 3X3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIZF300DT-T1-GE3 electronic components. SIZF300DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF300DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF300DT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIZF300DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET DUAL N-CHAN 30V PPAIR 3X3
Mfululizo :
TrenchFET® Gen IV
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
4.5 mOhm @ 10A, 10V, 1.84 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
22nC @ 10V, 62nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 15V, 3150pF @ 15V
Nguvu - Max :
3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-PowerPair® (6x5)
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