Taiwan Semiconductor Corporation - TSM80N950CI C0G

KEY Part #: K6399709

TSM80N950CI C0G Bei (USD) [45618pcs Hisa]

  • 1 pcs$0.85711

Nambari ya Sehemu:
TSM80N950CI C0G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
MOSFET N-CHANNEL 800V 6A ITO220.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Moduli za Dereva za Nguvu, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF and Viwango - Bridge Rectifiers ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM80N950CI C0G Sifa za Bidhaa

Nambari ya Sehemu : TSM80N950CI C0G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : MOSFET N-CHANNEL 800V 6A ITO220
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 950 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 19.6nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 691pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 25W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : ITO-220AB
Kifurushi / Kesi : TO-220-3 Full Pack, Isolated Tab

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