Nambari ya Sehemu :
TRS10E65C,S1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
DIODE SCHOTTKY 650V 10A TO220-2L
Aina ya Diode :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
650V
Sasa - Wastani Aliyerekebishwa (Io) :
10A (DC)
Voltage - Mbele (Vf) (Max) @ Kama :
1.7V @ 10A
Kasi :
No Recovery Time > 500mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
0ns
Sasa - Rejea kuvuja @ Vr :
90µA @ 650V
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-220-2
Kifurushi cha Kifaa cha Mtoaji :
TO-220-2L
Joto la Kufanya kazi - Junction :
175°C (Max)