Nambari ya Sehemu :
IPB024N10N5ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 180A TO263-7
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
180A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.4 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 183µA
Malango ya Lango (Qg) (Max) @ Vgs :
138nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
10200pF @ 50V
Kuondoa Nguvu (Max) :
250W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO263-7
Kifurushi / Kesi :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA