Infineon Technologies - IPB024N10N5ATMA1

KEY Part #: K6417567

IPB024N10N5ATMA1 Bei (USD) [34206pcs Hisa]

  • 1 pcs$1.20486
  • 1,000 pcs$1.04868

Nambari ya Sehemu:
IPB024N10N5ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V 180A TO263-7.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum and Transistors - JFETs ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB024N10N5ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB024N10N5ATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V 180A TO263-7
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 180A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.4 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 183µA
Malango ya Lango (Qg) (Max) @ Vgs : 138nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 10200pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 250W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-7
Kifurushi / Kesi : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA