Toshiba Semiconductor and Storage - RN1105,LF(CT

KEY Part #: K6526322

RN1105,LF(CT Bei (USD) [1936260pcs Hisa]

  • 1 pcs$0.11865
  • 10 pcs$0.10678
  • 25 pcs$0.07704
  • 100 pcs$0.05988
  • 250 pcs$0.03764
  • 500 pcs$0.03208
  • 1,000 pcs$0.02182

Nambari ya Sehemu:
RN1105,LF(CT
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
TRANS PREBIAS NPN 50V 0.1W SSM.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Transistors - JFETs, Viwango - Rectifiers - Moja and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage RN1105,LF(CT electronic components. RN1105,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1105,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1105,LF(CT Sifa za Bidhaa

Nambari ya Sehemu : RN1105,LF(CT
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : TRANS PREBIAS NPN 50V 0.1W SSM
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 2.2 kOhms
Upinzani - Base ya Emitter (R2) : 47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : 250MHz
Nguvu - Max : 100mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-75, SOT-416
Kifurushi cha Kifaa cha Mtoaji : SSM

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