Vishay Semiconductor Diodes Division - UGB18DCT-E3/81

KEY Part #: K6479170

UGB18DCT-E3/81 Bei (USD) [93142pcs Hisa]

  • 1 pcs$0.41980
  • 800 pcs$0.38959

Nambari ya Sehemu:
UGB18DCT-E3/81
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE ARRAY GP 200V 18A TO263AB. Rectifiers 200 Volt 18 Amp 20ns Dual 175 Amp IFSM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Viwango - Zener - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moduli and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division UGB18DCT-E3/81 electronic components. UGB18DCT-E3/81 can be shipped within 24 hours after order. If you have any demands for UGB18DCT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB18DCT-E3/81 Sifa za Bidhaa

Nambari ya Sehemu : UGB18DCT-E3/81
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE ARRAY GP 200V 18A TO263AB
Mfululizo : -
Hali ya Sehemu : Active
Usanidi wa Diode : 1 Pair Common Cathode
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyesafishwa (Io) (kwa Diode) : 18A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 9A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 30ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 200V
Joto la Kufanya kazi - Junction : -65°C ~ 150°C
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : TO-263AB

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