Nexperia USA Inc. - PMPB29XNE,115

KEY Part #: K6421414

PMPB29XNE,115 Bei (USD) [532793pcs Hisa]

  • 1 pcs$0.06942
  • 3,000 pcs$0.06102

Nambari ya Sehemu:
PMPB29XNE,115
Mzalishaji:
Nexperia USA Inc.
Maelezo ya kina:
MOSFET N-CH 30V 5A 6DFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Bridge Rectifiers, Transistors - IGBTs - Arrays, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMPB29XNE,115 Sifa za Bidhaa

Nambari ya Sehemu : PMPB29XNE,115
Mzalishaji : Nexperia USA Inc.
Maelezo : MOSFET N-CH 30V 5A 6DFN
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 33 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 18.6nC @ 4.5V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1150pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.7W (Ta), 12.5W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : DFN2020MD-6
Kifurushi / Kesi : 6-UDFN Exposed Pad

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